An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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    STGP19NC60KD


    IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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    STMicroelectronics 1373
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    CHf 1.1477

    Multiples of: 1

    Single600 V +/- 20 V  125 W TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 150 CStgp19nc60kd
    STGB14NC60KDT4


    IGBT Transistors PowerMESH" IGBT
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    STMicroelectronics 1000
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    CHf 1.123

    Multiples of: 1

    Single600 V2.1 V+/- 20 V 2 A  D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb14nc60kd
    STGP10NC60S


    Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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    STMicroelectronics 894
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    CHf 1.2731

    Multiples of: 1

    Single        Rail/Tube      
    STGFW20V60DF


    IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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    STMicroelectronics 539
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    CHf 0.8456

    Multiples of: 1

    Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
    STGF10M65DF2


    IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
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    STMicroelectronics 350
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    CHf 0.6776

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    Single650 V1.8 V+/- 20 V20 A+/- 250 uA  TO - 220FP - 3  Through Hole30 W- 55 C+ 175 CStgf10m65df2
    STGP8NC60KD


    IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
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    STMicroelectronics 212
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    CHf 0.8683

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    Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp8nc60kd
    STGF6M65DF2


    IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
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    STMicroelectronics 50
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    CHf 0.7611

    Multiples of: 50

    Single650 V1.55 V+/- 20 V12 A+/- 250 uA  TO - 220FP - 3  Through Hole24.2 W- 55 C+ 175 C 
    STGW15S120DF3


    STMicroelectronics IGBT Transistors
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    STMicroelectronics 20
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    CHf 4.5897

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    Single1.2 kV1.55 V+/- 20 V30 A250 nA  TO 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
    STGF15H60DF


    IGBT Transistors Trench gate H series 600V 15A HiSpd
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    STMicroelectronics 5
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    CHf 1.1061

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    Single600 V1.6 V+/- 20 V30 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf15h60df
    STGB6NC60HDT4


    IGBT Transistors PowerMESH TM IGBT
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    STMicroelectronics 3
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    CHf 0.5138

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    Single600 V2.7 V+/- 20 V 100 nA80 W D2PAK - 3ReelSiSmd/Smt80 W- 55 C+ 150 CStgb6nc60hd